The influence of the calcination rate on silicalite-1 membranesJAREMAN, Fredrik; ANDERSSON, Charlotte; HEDLUND, Jonas et al.Microporous and mesoporous materials. 2005, Vol 79, Num 1-3, pp 1-5, issn 1387-1811, 5 p.Article

On Vertical Drag Defects Formation During Direct Chill (DC) Casting of Aluminum BilletsCARLBERG, Torbjörn; JARFORS, Anders E. W.Metallurgical and materials transactions. B, Process metallurgy and materials processing science. 2014, Vol 45, Num 1, pp 175-181, issn 1073-5615, 7 p.Article

Formation mechanism of defects in annealed InPYUJIE HAN; XUNLANG LIU; JINGHUA JIAO et al.SPIE proceedings series. 1998, pp 346-353, isbn 0-8194-2873-6Conference Paper

On the defect generation and low voltage extrapolation of Q_BDin SiO₂/HfO₂ stacksDEGRAEVE, R; CRUPI, F; KWAK, D. H et al.Symposium on VLSI Technology. sd, pp 140-141, isbn 0-7803-8289-7, 1Vol, 2 p.Conference Paper

Influence of gas phase composition on the defects formation in lithium niobateTSIRLIN, M.Journal of materials science. 2004, Vol 39, Num 9, pp 3187-3189, issn 0022-2461, 3 p.Article

The behaviour of helium in metals = Comportement de l'hélium dans les métauxNANDEDKAR, R. V.Transactions of the Indian Institute of Metals. 1985, Vol 38, Num 1, pp 64-75, issn 0019-493XArticle

Positron trapping in mechanically deformed titanium = Capture des positons dans du titane ayant subi une déformation mécanique = Positroneneinfang in mechanisch verformtem TitanMCGETRICK, M.J; COLEMAN, C.F; HUGHES, A.E et al.Physica status solidi. A. Applied research. 1982, Vol 72, Num 2, pp K185-K188, issn 0031-8965Article

Oxygen precipitation and microdefects in Czochralski-grown silicon crystals = Sauerstoffausscheidung und Mikrodefekte in Czochralski-gezogenen SiliziumkristallenYASUTAKE, K; UMENO, M; KAWABE, H et al.Physica status solidi. A. Applied research. 1984, Vol 83, Num 1, pp 207-217, issn 0031-8965Article

The use of ion scattering for the study of radiation damage in metals and semiconductors. I: High energy scattering studies. II: Low energy scattering studies of ion bombardment induced surface damage = Utilisation de la diffusion d'ions pour l'étude des défauts d'irradiation dans les métaux et les semiconducteurs. I: Etudes de diffusion à haute énergie. II: Etudes de diffusion à basse énergie des défauts de surface induits par irradiation avec des ionsARMOUR, D. G.Vacuum. 1982, Vol 32, Num 9, issn 0042-207X, 573Article

Forty years study of fivefold twinned structures in small particles and thin filmsHOFMEISTER, H.Crystal research and technology (1979). 1998, Vol 33, Num 1, pp 3-25, issn 0232-1300Article

The sensitivity of thermal donor generation in silicon to self-interstitial sinksVORONKOV, V. V; VORONKOVA, G. I; BATUNINA, A. V et al.Journal of the Electrochemical Society. 2000, Vol 147, Num 10, pp 3899-3906, issn 0013-4651Article

Dynamics of formation of defects in annealed InPHAN, Y; LIU, X; JIAO, J et al.SPIE proceedings series. 1998, pp 5-8, isbn 0-8194-3012-9Conference Paper

Stone―Wales defect formation in the zigzag and armchair BC₂N nanotubes: A DFT studyGHAFOURI, Reza; ANAFCHEH, Maryam; ZAHEDI, Mansour et al.Physica. E, low-dimentional systems and nanostructures. 2014, Vol 58, pp 94-100, issn 1386-9477, 7 p.Article

Defect formation energies and homogeneity ranges of rock salt-, pyrite-, chalcopyrite- and molybdenite-type compound semiconductorsFIECHTER, S.Solar energy materials and solar cells. 2004, Vol 83, Num 4, pp 459-477, issn 0927-0248, 19 p.Article

Defect formation in chlorine-doped zinc oxideBO LIU; MU GU; XIAOLIN LIU et al.Solid state communications. 2013, Vol 171, pp 30-33, issn 0038-1098, 4 p.Article

Dynamics induced by electronic transitions : Finite-temperature relaxation of self-trapped excitons to defects in NaClWILLIAMS, R. T; SONG, K. S.Surface science. 2005, Vol 593, Num 1-3, pp 89-101, issn 0039-6028, 13 p.Conference Paper

The Structure and Defect Formation Energy in Tetragonal PbTiO₃: Ab Initio CalculationGE, Fang-Fang; WU, Wei-Dong; CAO, Lin-Hong et al.Ferroelectrics (Print). 2010, Vol 401, pp 154-160, issn 0015-0193, 7 p.Conference Paper

Ab initio study of defect properties in YPO₄ GAO, F; XIAO, H. Y; ZHOU, Y. G et al.Computational materials science. 2012, Vol 54, pp 170-175, issn 0927-0256, 6 p.Article

Study on Mn-doped SrTiO₃ with first principle calculationCHENXING YANG; TINGYU LIU; ZHIJUN CHENG et al.Physica. B, Condensed matter. 2012, Vol 407, Num 5, pp 844-848, issn 0921-4526, 5 p.Article

Effect of carbon additions on the as-cast microstructure and defect formation of a single crystal Ni-based superalloyAL-JARBA, K. A; FUCHS, G. E.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2004, Vol 373, Num 1-2, pp 255-267, issn 0921-5093, 13 p.Article

First-principles calculation of intrinsic defect formation volumes in siliconCENTONI, Scott A; SADIGH, Babak; GILMER, George H et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 19, pp 195206.1-195206.9, issn 1098-0121Article

Split and sealing of dislocated pipes at the front of a growing crystalGUTKIN, M. Yu; SHEINERMAN, A. G.Physica status solidi. B. Basic research. 2004, Vol 241, Num 8, pp 1810-1826, issn 0370-1972, 17 p.Article

A review of defect generation in the SiO₂ and at its interface with SIZHANG, J. F.Proceedings - Electrochemical Society. 2003, pp 262-290, issn 0161-6374, isbn 1-56677-347-4, 29 p.Conference Paper

Atomistic theory of mechanical relaxation in fullerene nanotubesYAKOBSON, B. I; SAMSONIDZE, G; SAMSONIDZE, G. G et al.Carbon (New York, NY). 2000, Vol 38, Num 11-12, pp 1675-1680, issn 0008-6223Article

Misfit dislocations in wire composite solidsGUTKIN, M. Yu; OVID'KO, I. A; SHEINERMAN, A. G et al.Journal of physics. Condensed matter (Print). 2000, Vol 12, Num 25, pp 5391-5401, issn 0953-8984Article